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Transistors
2SD2321
Silicon NPN epitaxial planar type
For low-frequency power amplification
4.00.2 2.00.2
(0.8) 3.00.2
Unit: mm
Features
* Low collector-emitter saturation voltage VCE(sat) * Satisfactory operation performances at high efficiency with the lowvoltage power supply
0.75 max.
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 400 150 -55 to +150 Unit V V V A
1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
15.60.5
(0.8)
7.6
A mW C C
1 : Emitter 2 : Collector 3 : Base NS-B1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VEBO ICBO ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCB = 10 V, IB = 0 VEB = 7 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 230 150 0.28 150 26 50 1.00 V MHz pF Min 20 7 0.1 1 0.1 600 Typ Max Unit V V A A A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 230 to 380 R 340 to 600
Publication date: February 2003
SJC00256BED
1
2SD2321
PC Ta
500
2.4
IC VCE
Ta = 25C IB = 7 mA 5 6
IC VBE
VCE = 2 V
Collector power dissipation PC (mW)
400
2.0
Collector current IC (A)
Collector current IC (A)
6 mA 1.6 5 mA 4 mA 3 mA 0.8 2 mA 0.4 1 mA
4
Ta = 75C
-25C
300
1.2
3
25C
200
2
100
1
0
0
40
80
120
160
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
VBE(sat) IC
100
hFE IC
600 VCE = 2 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 30
IC / IB = 30
Forward current transfer ratio hFE
500
1 Ta = 75C 0.1 25C -25C
10
Ta = 75C
400 25C 300 -25C 200
25C 1 Ta = -25C 75C
0.01
0.1
100
0.001 0.01
0.1
1
10
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 VCB = 6 V Ta = 25C
100
Cob VCB
IE = 0 f = 1 MHz Ta = 25C
100
Safe operation area
Single pulse Ta = 25C
Transition frequency fT (MHz)
Collector current IC (A)
300
80
10 ICP IC t=1s 1 t = 10 ms
60
200
40
100
0.1
20
0 - 0.01
- 0.1
-1
-10
0
1
10
100
0.01 0.1
1
10
100
Emitter current IE (A)
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJC00256BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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